Complete equipment for producing sapphire-based aluminum-doped zinc oxide transparent conductive single crystal thin film material

The invention relates to the field of photoelectric materials, and provides sapphire-based aluminum-doped zinc oxide transparent conductive single crystal thin film material production complete equipment which is characterized in that a first zinc oxide layer, a zinc magnesium oxide layer, a second zinc oxide layer and an aluminum oxide template layer are sequentially formed on the surface of a sapphire substrate through a plasma enhanced atomic layer deposition method; the lattice constant of the zinc-magnesium-oxide layer is smaller than that of zinc oxide and that of sapphire, and the thermal expansion coefficient of the zinc-magnesium-oxide layer is larger than that of zinc oxide and that of sapphire; annealing the sapphire substrate on which the first zinc oxide layer, the zinc-magnesium-oxide layer, the second zinc oxide layer and the aluminum oxide template layer are formed, so that pores are formed in the first zinc oxide layer, the zinc-magnesium-oxide layer and the second zinc oxide layer; and formi