Improved photomultiplier techniques

There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a c...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	JORDAN CHRISTOPH, BRUSCHKE, ANDREAS, F., A, WILLERBRAND HAROLD A
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES TRANSMISSION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	JORDAN CHRISTOPH BRUSCHKE, ANDREAS, F., A WILLERBRAND HAROLD A
description	There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a combiner (110) having a receiver (110) for receiving a signal derived from a silicon photomultiplier (SiPM; and inputs (IN1, IN2) for receiving signals from the first main output (Sout) and the second output (Fout) of the receiver (100, 200) and configured to generate a combined signal based on the received signals. A first signal path is defined between the first main output (Sout) and a first input (IN1) of the inputs of the combiner (110). A second signal path is defined between the second output (Fout) and a second input (IN2) of the inputs of the combiner (110). The readout circuit (100) further comprises a circuit arrangement (120) arranged in at least one of the first signal path and the second signal path an
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118511459A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118511459A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118511459A3</originalsourceid><addsrcrecordid>eNrjZFD2zC0oyi9LTVEoyMgvyc8tzSnJLMjJTC1SKElNzsjLLCxNLeZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGFqaGhiamlo7GxKgBADd-J0A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Improved photomultiplier techniques</title><source>esp@cenet</source><creator>JORDAN CHRISTOPH ; BRUSCHKE, ANDREAS, F., A ; WILLERBRAND HAROLD A</creator><creatorcontrib>JORDAN CHRISTOPH ; BRUSCHKE, ANDREAS, F., A ; WILLERBRAND HAROLD A</creatorcontrib><description>There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a combiner (110) having a receiver (110) for receiving a signal derived from a silicon photomultiplier (SiPM; and inputs (IN1, IN2) for receiving signals from the first main output (Sout) and the second output (Fout) of the receiver (100, 200) and configured to generate a combined signal based on the received signals. A first signal path is defined between the first main output (Sout) and a first input (IN1) of the inputs of the combiner (110). A second signal path is defined between the second output (Fout) and a second input (IN2) of the inputs of the combiner (110). The readout circuit (100) further comprises a circuit arrangement (120) arranged in at least one of the first signal path and the second signal path an</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES ; TRANSMISSION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240816&DB=EPODOC&CC=CN&NR=118511459A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240816&DB=EPODOC&CC=CN&NR=118511459A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JORDAN CHRISTOPH</creatorcontrib><creatorcontrib>BRUSCHKE, ANDREAS, F., A</creatorcontrib><creatorcontrib>WILLERBRAND HAROLD A</creatorcontrib><title>Improved photomultiplier techniques</title><description>There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a combiner (110) having a receiver (110) for receiving a signal derived from a silicon photomultiplier (SiPM; and inputs (IN1, IN2) for receiving signals from the first main output (Sout) and the second output (Fout) of the receiver (100, 200) and configured to generate a combined signal based on the received signals. A first signal path is defined between the first main output (Sout) and a first input (IN1) of the inputs of the combiner (110). A second signal path is defined between the second output (Fout) and a second input (IN2) of the inputs of the combiner (110). The readout circuit (100) further comprises a circuit arrangement (120) arranged in at least one of the first signal path and the second signal path an</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSMISSION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2zC0oyi9LTVEoyMgvyc8tzSnJLMjJTC1SKElNzsjLLCxNLeZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGFqaGhiamlo7GxKgBADd-J0A</recordid><startdate>20240816</startdate><enddate>20240816</enddate><creator>JORDAN CHRISTOPH</creator><creator>BRUSCHKE, ANDREAS, F., A</creator><creator>WILLERBRAND HAROLD A</creator><scope>EVB</scope></search><sort><creationdate>20240816</creationdate><title>Improved photomultiplier techniques</title><author>JORDAN CHRISTOPH ; BRUSCHKE, ANDREAS, F., A ; WILLERBRAND HAROLD A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118511459A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSMISSION</topic><toplevel>online_resources</toplevel><creatorcontrib>JORDAN CHRISTOPH</creatorcontrib><creatorcontrib>BRUSCHKE, ANDREAS, F., A</creatorcontrib><creatorcontrib>WILLERBRAND HAROLD A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JORDAN CHRISTOPH</au><au>BRUSCHKE, ANDREAS, F., A</au><au>WILLERBRAND HAROLD A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Improved photomultiplier techniques</title><date>2024-08-16</date><risdate>2024</risdate><abstract>There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a combiner (110) having a receiver (110) for receiving a signal derived from a silicon photomultiplier (SiPM; and inputs (IN1, IN2) for receiving signals from the first main output (Sout) and the second output (Fout) of the receiver (100, 200) and configured to generate a combined signal based on the received signals. A first signal path is defined between the first main output (Sout) and a first input (IN1) of the inputs of the combiner (110). A second signal path is defined between the second output (Fout) and a second input (IN2) of the inputs of the combiner (110). The readout circuit (100) further comprises a circuit arrangement (120) arranged in at least one of the first signal path and the second signal path an</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	chi ; eng
recordid	cdi_epo_espacenet_CN118511459A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES TRANSMISSION
title	Improved photomultiplier techniques
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T03%3A49%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JORDAN%20CHRISTOPH&rft.date=2024-08-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN118511459A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true