Improved photomultiplier techniques
There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a c...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | There is provided a semiconductor device for a silicon photomultiplier (SiPM; 200) is provided. The invention also relates to a readout circuit (100). A photomultiplier (SiPM; 200) has a first main output (Sout) and a capacitively coupled second output (Fout). The readout circuit (100) comprises a combiner (110) having a receiver (110) for receiving a signal derived from a silicon photomultiplier (SiPM; and inputs (IN1, IN2) for receiving signals from the first main output (Sout) and the second output (Fout) of the receiver (100, 200) and configured to generate a combined signal based on the received signals. A first signal path is defined between the first main output (Sout) and a first input (IN1) of the inputs of the combiner (110). A second signal path is defined between the second output (Fout) and a second input (IN2) of the inputs of the combiner (110). The readout circuit (100) further comprises a circuit arrangement (120) arranged in at least one of the first signal path and the second signal path an |
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