Real-time photoresist degassing control system and method

A system and method for controlling the amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. Among other effects, the outgassing amount is based on the species being implanted, the type of photoresist, the energy of the implantation, and the dose that has been implanted. By controlling the effective beam current, the outgassing amount can be maintained below a predetermined threshold. By developing and utilizing the relationship between the effective beam current, the completion dose, and the degassing rate, the effective beam current can be more accurately controlled to implant a workpiece in a most efficient manner while maintaining below a predetermined degassing threshold. 一种用于对由将离子植入到设置在工件上的光刻胶中引起的除气量进行控制的系统及方法。除了其他影响之外，除气量是基于被植入的物质、光刻胶的类型、植入的能量及已经植入的剂量。通过对有效束电流进行控制，可使除气量维持低于预定阈值。通过开发及利用有效束电流、完成剂量及除气速率之间的关系，可更精确地对有效束电流进行控制，以在维持低于预定除气阈值的同时以最高效的方式对工件进行植入。