Memory device

The invention provides a memory device. The memory device comprises a substrate and a stack structure. The lower portion of the stacked structure includes a first global selection line structure and a second global selection line structure. The first global selection line structure comprises a first long strip object, a second short strip object and a first connecting part located between the first long strip object and the second short strip object. The first long strip object and the second short strip object extend in a first direction, the first connecting part extends in a second direction different from the first direction, and the first long strip object continuously extends to a second memory array area from a first memory array area through a stepped structure area. And the second global selection line structure is adjacent to the first global selection line structure and is divided into two parts separated from each other by the first connecting part of the first global selection line structure. 本公开