LED epitaxial structure, manufacturing method thereof and LED chip

The invention provides an LED epitaxial structure, a manufacturing method thereof and an LED chip. A current expansion layer embedded with a metal nano lattice structure is arranged, and the free vibration frequency of the metal nano lattice structure is matched with the photon frequency of emergent light of a light emitting structure to form a plasmon resonance effect; in a resonance state, the energy of a photon electromagnetic field is effectively converted into collective vibration energy of free electrons, so that resonance electrons on the metal surface are coupled with incident photons, the excited state of a semiconductor is further enhanced, more electron-hole pairs are subjected to radiation recombination, the internal quantum efficiency of the LED epitaxial structure is improved, and meanwhile, the luminous efficiency of the LED epitaxial structure is improved. The interface reflection between different material layers is reduced to increase the light extraction rate; in addition, the current unifo