Detecting device chip assembly, manufacturing method and related equipment thereof

The invention provides a detector chip assembly, a manufacturing method and related equipment, through the detector chip assembly manufactured by the invention, a P-N-P junction can be formed between adjacent pixels, the problem of large crosstalk caused by movement of carriers of a traditional plan...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FANG WENDE, SONG JIANGMENG, AN LIAN, LI XINGPENG, ZHOU SHUAIKUN, LIU QINGSONG, CHEN HUANHUAN, WU XINXIU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a detector chip assembly, a manufacturing method and related equipment, through the detector chip assembly manufactured by the invention, a P-N-P junction can be formed between adjacent pixels, the problem of large crosstalk caused by movement of carriers of a traditional planar junction between the pixels is effectively avoided, crosstalk between the pixels can be effectively reduced, and the performance of the detector chip assembly is improved. Compared with a mesa junction, the detector has smaller dark current and higher sensitivity, and the low-crosstalk infrared detector can be formed by interconnecting the detector chip assembly and the reading circuit and then packaging the detector chip assembly and the Dewar. The detector chip assembly manufactured by the method provided by the embodiment of the invention has the advantage that the problem of large crosstalk caused by movement of carriers between pixels can be avoided, and compared with a traditional process structure, the lo