P-I-N heterojunction terminal and preparation method thereof

The invention relates to a P-I-N heterojunction terminal and a preparation method thereof, and belongs to the technical field of microelectronics. The terminal sequentially comprises a Ni ohmic electrode, a SiC substrate, an n +-SiC buffer layer and an n-SiC layer from bottom to top, AlN insertion layers are arranged on the two sides of the n-SiC layer respectively, a p-GaN cap layer is arranged on the upper sides of the AlN insertion layers, Ni Schottky electrodes are arranged on the upper sides of the p-GaN cap layer and the upper side of the n-SiC layer, Au electrodes are arranged on the upper sides of the Ni Schottky electrodes, and the Au electrodes are arranged on the upper sides of the Au electrodes. SiO2 passivation layers are arranged on the upper side of the Au electrode, the side of the Ni Schottky electrode, the side of the p-GaN cap layer, the side of the AlN insertion layer and the upper side of the n-SiC layer. The performance of the SiC SBD can be effectively improved, and the SiC SBD has the