Semiconductor device and method for forming deep trench and shallow trench in semiconductor device

The invention discloses a semiconductor device and a method for forming a deep trench and a shallow trench in the semiconductor device, relates to a method for forming a power semiconductor device, and aims to overcome the defects caused by simultaneously forming trenches with different depths in the prior art. According to the method for forming the trench network structure in the trench device, the height transition area between the deep trench and the shallow trench can be reduced, the control difficulty of the manufacturing process can be reduced, and the uniformity and the consistency of the depth and the width of the deep trench and the shallow trench in the trench network structure in the trench power device are improved. 半导体器件及器件内深沟槽和浅沟槽的形成方法，本发明涉及于功率半导体器件的形成方法，为克服现有技术在同时形成不同深度的沟槽中造成的不良，本发明采用硬掩模层和沟槽填充物的保护，先后形成不同深度的沟槽，本发明提出数种沟槽器件中沟槽网络结构的形成方法，有利于减少深沟槽和浅沟槽之间的高度过渡区域，并能降低制造工艺控制难度，增加沟槽功率器件中沟槽网络结构中深沟槽和浅沟槽各自的深度和宽度的均匀性和一致性。