High-frequency transformer structure with high insulating strength and low coupling capacitance and isolated gate driver

The invention relates to the technical field of power semiconductor packaging, in particular to a high-frequency transformer structure with high insulating strength and low coupling capacitance and an isolated gate driver, which comprises a ferrite magnetic core, a voltage transformation layer, two fixed clamping pieces, metal pins for leading out primary and secondary windings and a shell, the voltage transformation layer is fixed between the two fixed clamping pieces, the iron oxide magnetic core is vertically embedded in the voltage transformation layer, the voltage transformation layer comprises winding layers and a plurality of insulating interlayers which are arranged in a staggered and parallel mode, metal pins extend out of the two ends of the iron oxide magnetic core to be welded to the winding layers, the metal pins are used for leading out primary and secondary wiring terminals, and the shell is arranged on the outer sides of the fixed clamping pieces in a sleeving mode. And silica gel is filled in