De-photoresist stripping machine semiconductor wafer damage evaluation method based on dry-type de-photoresist

The invention relates to the technical field of semiconductor photoresist removal, and provides a photoresist removal stripping machine semiconductor wafer damage evaluation method based on dry-type photoresist removal, and the method comprises the steps: obtaining a surface topography point cloud data set; obtaining a single wafer bare chip data point set based on a projection result of the surface topography point cloud data set, and determining a micro local smoothness index based on Gaussian curvatures and normal vectors of data points in the super voxels and adjacent data points; determining a local plane approximation degree based on a similarity degree of Gaussian curvatures of the data points, and calculating a local subduction sag factor based on the local plane approximation degree and a micro-local smoothness index; determining a local reduction index based on the distance from the data point in the super voxel to the nearest neighbor bare chip plane corresponding to the super voxel and the local r