Wafer temperature correction structure and method
The invention discloses a wafer temperature correction structure and method, and the structure comprises a heater and a wafer, the top of the heater is provided with a correction ring, and the wafer is disposed above the correction ring. According to the invention, the correction ring is placed at t...
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| creator | YE MINGFA |
| description | The invention discloses a wafer temperature correction structure and method, and the structure comprises a heater and a wafer, the top of the heater is provided with a correction ring, and the wafer is disposed above the correction ring. According to the invention, the correction ring is placed at the edge above the heater in the cavity of the reaction chamber, so that a thermal field can be uniformly and quickly distributed on the whole wafer in the chemical vapor deposition manufacturing process of a semiconductor device, and the problem of poor yield of the growth thickness of a thin film is solved; after the wafer temperature correction ring is added, the thickness uniformity can be improved, and the production yield is further improved; the correction ring is placed at the edge above the heater in the cavity of the reaction chamber, so that a thermal field can be uniformly and quickly distributed on the whole wafer in the chemical vapor deposition manufacturing process of a semiconductor device, and the |
| format | Patent |
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According to the invention, the correction ring is placed at the edge above the heater in the cavity of the reaction chamber, so that a thermal field can be uniformly and quickly distributed on the whole wafer in the chemical vapor deposition manufacturing process of a semiconductor device, and the problem of poor yield of the growth thickness of a thin film is solved; after the wafer temperature correction ring is added, the thickness uniformity can be improved, and the production yield is further improved; the correction ring is placed at the edge above the heater in the cavity of the reaction chamber, so that a thermal field can be uniformly and quickly distributed on the whole wafer in the chemical vapor deposition manufacturing process of a semiconductor device, and the</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240816&DB=EPODOC&CC=CN&NR=118497716A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240816&DB=EPODOC&CC=CN&NR=118497716A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YE MINGFA</creatorcontrib><title>Wafer temperature correction structure and method</title><description>The invention discloses a wafer temperature correction structure and method, and the structure comprises a heater and a wafer, the top of the heater is provided with a correction ring, and the wafer is disposed above the correction ring. 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| language | chi ; eng |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Wafer temperature correction structure and method |
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