Wafer temperature correction structure and method

The invention discloses a wafer temperature correction structure and method, and the structure comprises a heater and a wafer, the top of the heater is provided with a correction ring, and the wafer is disposed above the correction ring. According to the invention, the correction ring is placed at the edge above the heater in the cavity of the reaction chamber, so that a thermal field can be uniformly and quickly distributed on the whole wafer in the chemical vapor deposition manufacturing process of a semiconductor device, and the problem of poor yield of the growth thickness of a thin film is solved; after the wafer temperature correction ring is added, the thickness uniformity can be improved, and the production yield is further improved; the correction ring is placed at the edge above the heater in the cavity of the reaction chamber, so that a thermal field can be uniformly and quickly distributed on the whole wafer in the chemical vapor deposition manufacturing process of a semiconductor device, and the