Semiconductor device with improved temperature uniformity

A basin of a semiconductor device includes a cold zone having a first predicted operating temperature and a hot zone having a second predicted operating temperature greater than the first predicted operating temperature. The design parameter has a first value in the cold zone and a second value different from the first value in the hot zone. The difference is configured such that a heat dissipated by the basin in the hot zone during operation of the semiconductor device is less than a heat dissipated if the first value and the second value are equal. The design parameters may be, for example, a basin width, a source structure width, a JFET region width, a channel length, a channel width, a length of a gate, a displacement of a center of the gate relative to a center of the JFET region, a dopant concentration, or a combination thereof. 一种半导体器件的盆部，包括具有第一预计操作温度的冷区和具有大于第一预计操作温度的第二预计操作温度的热区。设计参数在冷区中具有第一值和在热区中具有不同于第一值的第二值。该差值配置为使得盆部在半导体器件的操作期间在热区中耗散的热量少于如果第一值和第二值相等所耗散的热量。设计参数可以是例如盆部宽度、源极结构宽度、JFET区域宽度、沟道长度、沟道宽度、栅极的长