Method of forming pattern and method of manufacturing semiconductor memory device

A method of forming a pattern and a method of manufacturing a semiconductor memory device are provided. The method includes forming an etch target layer over a substrate including a first region and a second region; forming a hard mask structure over the etch target layer; forming a photoresist pattern including a first photoresist pattern including an engraved pattern in the first region and a second photoresist pattern including an embossed pattern in the second region; forming an upper hard mask pattern including a plurality of openings; forming a reversible hard mask pattern filling the plurality of openings in the first region; and forming a feature pattern including a first pattern in the first region and a second pattern in the second region, in which the first pattern includes a plurality of island-like patterns and a dam structure planarly surrounding the plurality of island-like patterns. 提供了形成图案的方法和制造半导体存储器装置的方法，所述方法包括以下步骤：在包括第一区域和第二区域的基底上方形成蚀刻目标层；在蚀刻目标层上方形成硬掩模结构；形成包括第一光致抗蚀剂图案和第二光致抗蚀剂图案的光致抗蚀剂图案，第一光