Light emitting diode for improving scratch damage and preparation method thereof

The invention provides a light-emitting diode for improving scratching damage and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The preparation method of the light-emitting diode comprises the following steps: manufacturing an epitaxial structure, wherein a first surface of the epitaxial structure is provided with a scribing channel for splitting the epitaxial structure and a plurality of epitaxial regions divided by the scribing channel; forming a passivation layer on the first surface of the epitaxial structure, and removing an area, opposite to the scribing channel, on the passivation layer; and splitting the epitaxial structure along the scribing channels to obtain a plurality of light-emitting diodes. According to the embodiment of the invention, the problem that the light-emitting diode is damaged due to brittle fracture of the passivation layer in the wafer splitting process can be improved. 本公开提供了一种改善划裂损伤的发光二极管及其制备方法，属于光电子制造技术领域。该发光二极管的制备方法包括：制作外延结构，所