Power device optimized terminal structure and manufacturing method thereof

The invention discloses a power device optimized terminal structure and a manufacturing method thereof. The power device optimized terminal structure comprises a substrate, an epitaxial layer, a main junction, a ring region, a deep ring region, a groove, a passivation layer, an anode electrode and a cathode electrode. M ring regions distributed at intervals and M-1 deep ring regions distributed at intervals are formed in a terminal region of the power device, depletion is assisted by the deep ring regions, the protection effect of a field limiting ring structure is effectively improved, the area of the terminal region is remarkably reduced, meanwhile, a peak electric field at a main junction is effectively reduced, and the withstand voltage of the device is ensured. The invention also discloses a manufacturing method of the device structure. 本发明公开了一种功率器件优化终端结构及其制造方法，该功率器件优化终端结构包括衬底、外延层、主结、环区、深环区、沟槽、钝化层、阳极电极和阴极电极。于功率器件的终端区形成M个间隔分布的环区和M-1个间隔分布的深环区，通过深环区辅助耗尽，有效提升场限环结构的保护效果，在显著减小终端区面积的同时，有效降低主结处峰值电场，保证器件耐压。本发明同时公