Package structure and method of kiloampere-level single-tube SiC power semiconductor module

The invention belongs to the technical field of semiconductors, and discloses a packaging structure of a kiloampere-level single-tube type SiC power semiconductor module, which mainly comprises a SiC chip, a ceramic substrate, a bottom plate, a power and signal terminal, an integrated gate/Kelvin source resistor, a shell and the like. According to the packaging structure, the multi-chip parallel electric heating performance is improved, the size of the power module is reduced, the limitation of the number of parallel SiC chips is broken through, the current capacity and the power density of an existing SiC power semiconductor module are greatly improved, and the reliability of the power module is improved. The single-tube type power semiconductor module is especially suitable for large-power occasions such as rail transit traction, flexible direct current transmission and the like of 1.7 kV to 6.5 kV. In addition, the packaging structure provided by the invention is compatible with traditional welding, bondin