Light emitting diode capable of improving lighting effect
The invention provides a light emitting diode capable of improving light efficiency, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, an insulating layer and a first metal reflecting layer, wherein the insulating layer is posit...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a light emitting diode capable of improving light efficiency, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, an insulating layer and a first metal reflecting layer, wherein the insulating layer is positioned on the surface of the epitaxial layer; the surface, far away from the epitaxial layer, of the insulating layer is provided with a plurality of reflection increasing structures arranged at intervals, the reflection increasing structures comprise at least one of concave holes and protrusions, the first metal reflecting layer is stacked on the insulating layer, and the surface, close to the insulating layer, of the first metal reflecting layer is attached to the surfaces of the reflection increasing structures. The light reflecting area of the metal reflecting layer can be increased, and the light emitting effect of the light emitting diode can be improved.
本公开提供了一种改善光效的发光二极管,属于光电子制造技术领域。该发光二极管包括:外延层、绝缘层和第一金属反射层 |
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