Semiconductor light emitting device
A semiconductor light emitting device includes: a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; an active layer; an electrode layer formed on a top surface of the second conductivity type semiconduct...
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creator | KIM TAE-HUN PARK GYEONG-SEON JANG TAE-SUNG JUNG DOO-HO LEE SU-YEOL YOO HANUL |
description | A semiconductor light emitting device includes: a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; an active layer; an electrode layer formed on a top surface of the second conductivity type semiconductor layer; a reflective layer formed on a portion of a top surface of the electrode layer; a bonding pad formed on a top surface of the reflective layer; an insulating layer formed on another portion of the top surface of the electrode layer; and an insulating spacer conformally formed along the surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethylammonium hydroxide (TMAH), KOH, NaOH, and NH4OH, and the bond pad has a shell shape including a portion whose width gradually decreases as it is away from the reflective layer.
一种半导体发光装置包括:第一导电类型半导体层;第二导电类型半导体层,其布置在第一导电类型半导体层上;有源层;电极层,其形成在第二导电类型半导体层的顶表面上;反射层,其形成在电极层的顶表面的一部分上;接合焊盘,其形成在反射层的顶表 |
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一种半导体发光装置包括:第一导电类型半导体层;第二导电类型半导体层,其布置在第一导电类型半导体层上;有源层;电极层,其形成在第二导电类型半导体层的顶表面上;反射层,其形成在电极层的顶表面的一部分上;接合焊盘,其形成在反射层的顶表</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240806&DB=EPODOC&CC=CN&NR=118448547A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240806&DB=EPODOC&CC=CN&NR=118448547A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM TAE-HUN</creatorcontrib><creatorcontrib>PARK GYEONG-SEON</creatorcontrib><creatorcontrib>JANG TAE-SUNG</creatorcontrib><creatorcontrib>JUNG DOO-HO</creatorcontrib><creatorcontrib>LEE SU-YEOL</creatorcontrib><creatorcontrib>YOO HANUL</creatorcontrib><title>Semiconductor light emitting device</title><description>A semiconductor light emitting device includes: a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; an active layer; an electrode layer formed on a top surface of the second conductivity type semiconductor layer; a reflective layer formed on a portion of a top surface of the electrode layer; a bonding pad formed on a top surface of the reflective layer; an insulating layer formed on another portion of the top surface of the electrode layer; and an insulating spacer conformally formed along the surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethylammonium hydroxide (TMAH), KOH, NaOH, and NH4OH, and the bond pad has a shell shape including a portion whose width gradually decreases as it is away from the reflective layer.
一种半导体发光装置包括:第一导电类型半导体层;第二导电类型半导体层,其布置在第一导电类型半导体层上;有源层;电极层,其形成在第二导电类型半导体层的顶表面上;反射层,其形成在电极层的顶表面的一部分上;接合焊盘,其形成在反射层的顶表</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAOTs3NTM7PSylNLskvUsjJTM8oUQAKlZRk5qUrpKSWZSan8jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_Q0MLExMLUxNzR2Ni1AAABFAmxg</recordid><startdate>20240806</startdate><enddate>20240806</enddate><creator>KIM TAE-HUN</creator><creator>PARK GYEONG-SEON</creator><creator>JANG TAE-SUNG</creator><creator>JUNG DOO-HO</creator><creator>LEE SU-YEOL</creator><creator>YOO HANUL</creator><scope>EVB</scope></search><sort><creationdate>20240806</creationdate><title>Semiconductor light emitting device</title><author>KIM TAE-HUN ; PARK GYEONG-SEON ; JANG TAE-SUNG ; JUNG DOO-HO ; LEE SU-YEOL ; YOO HANUL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118448547A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM TAE-HUN</creatorcontrib><creatorcontrib>PARK GYEONG-SEON</creatorcontrib><creatorcontrib>JANG TAE-SUNG</creatorcontrib><creatorcontrib>JUNG DOO-HO</creatorcontrib><creatorcontrib>LEE SU-YEOL</creatorcontrib><creatorcontrib>YOO HANUL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM TAE-HUN</au><au>PARK GYEONG-SEON</au><au>JANG TAE-SUNG</au><au>JUNG DOO-HO</au><au>LEE SU-YEOL</au><au>YOO HANUL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor light emitting device</title><date>2024-08-06</date><risdate>2024</risdate><abstract>A semiconductor light emitting device includes: a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; an active layer; an electrode layer formed on a top surface of the second conductivity type semiconductor layer; a reflective layer formed on a portion of a top surface of the electrode layer; a bonding pad formed on a top surface of the reflective layer; an insulating layer formed on another portion of the top surface of the electrode layer; and an insulating spacer conformally formed along the surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethylammonium hydroxide (TMAH), KOH, NaOH, and NH4OH, and the bond pad has a shell shape including a portion whose width gradually decreases as it is away from the reflective layer.
一种半导体发光装置包括:第一导电类型半导体层;第二导电类型半导体层,其布置在第一导电类型半导体层上;有源层;电极层,其形成在第二导电类型半导体层的顶表面上;反射层,其形成在电极层的顶表面的一部分上;接合焊盘,其形成在反射层的顶表</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor light emitting device |
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