Semiconductor light emitting device

A semiconductor light emitting device includes: a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; an active layer; an electrode layer formed on a top surface of the second conductivity type semiconductor layer; a reflective layer formed on a portion of a top surface of the electrode layer; a bonding pad formed on a top surface of the reflective layer; an insulating layer formed on another portion of the top surface of the electrode layer; and an insulating spacer conformally formed along the surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethylammonium hydroxide (TMAH), KOH, NaOH, and NH4OH, and the bond pad has a shell shape including a portion whose width gradually decreases as it is away from the reflective layer. 一种半导体发光装置包括：第一导电类型半导体层；第二导电类型半导体层，其布置在第一导电类型半导体层上；有源层；电极层，其形成在第二导电类型半导体层的顶表面上；反射层，其形成在电极层的顶表面的一部分上；接合焊盘，其形成在反射层的顶表