Monolithic integrated full-color LED micro-display array and preparation method thereof

The invention relates to the technical field of semiconductor light-emitting display, in particular to a monolithic integrated full-color LED micro-display array and a preparation method thereof. The LED sequentially comprises a substrate, an intrinsic GaN layer growing on the substrate, an n-type GaN layer growing on the intrinsic GaN layer, a light-emitting array layer growing on the n-type GaN layer, a common n electrode arranged on the n-type GaN layer, a p electrode array arranged on the light-emitting array layer and a SiO2 passivation layer arranged on the p electrode array from bottom to top. The light-emitting array layer comprises three light-emitting arrays which are sequentially arranged on a plane; the material of the three-primary-color LED is obtained through in-situ growth, damage to the side wall of an LED pixel in the plasma etching process is avoided, and aggravation of the droop effect caused by non-radiative recombination due to damage defects is reduced; and meanwhile, through a non-tran