SOI wafer based on SiON buried insulating layer and manufacturing method thereof

The invention discloses an SOI (Silicon On Insulator) wafer based on a SiON buried insulating layer and a manufacturing method thereof, and mainly solves the problem that the smooth slippage characteristic of the buried insulating layer of the existing SOI wafer is limited. The invention relates to a silicon nitride thin film solar cell which comprises a top layer Si, a buried insulating layer and a substrate Si from top to bottom, the buried insulating layer adopts a SiON thin film, the thickness of the SiON thin film is 90nm-4mu m, a SiO2 thin film is grown on the substrate Si through a wet oxygen process, and then the SiON thin film is obtained through nitrogen plasma nitriding treatment, so that the loose degree of the buried insulating layer is increased. According to the invention, the smooth sliding characteristic of the buried insulating layer of the SOI wafer is effectively improved, so that the SOI wafer has the advantages of high dielectric constant of the buried insulating layer, good electrical c