Multi-layer buried insulating layer structure for enhancing smooth slip effect of SOI wafer and manufacturing method of multi-layer buried insulating layer structure

The invention discloses a multi-layer buried insulating layer structure for enhancing the smooth sliding effect of an SOI wafer and a manufacturing method, and mainly solves the problem that the smooth sliding characteristic of an existing SOI wafer buried insulating layer is limited. The multilayer buried insulating layer comprises a first SiO2 layer, a second SiOxNy layer,..., a (2i-1) th SiO2 layer, a (2i) th SiOxNy layer and a (2i + 1) th SiO2 layer from top to bottom, i is larger than or equal to 1, the thickness of each SiO2 layer ranges from 30 nm to 100 nm, the thickness of each SiOxNy layer ranges from 30 nm to 1 [mu] m, and the total thickness of the multilayer buried insulating layer ranges from 90 nm to 5 [mu] m. The flexible sliding characteristic of the buried insulating layer is improved, a good bonding interface is formed for subsequent SOI wafer preparation, the dielectric constant is high, the electrical characteristic is good, the preparation process is simple, the method can be compatible