Nine-tube SRAM (Static Random Access Memory) unit applied to in-memory logic operation

The invention discloses a 9-tube SRAM (Static Random Access Memory) unit applied to in-memory logic operation. Comprising a 7-tube write-in and storage part and a 2-tube read-out and calculation part, the 7-tube write-in and storage part comprises an NMOS transistor N1, an NMOS transistor N2, an NMOS transistor N3, an NMOS transistor N4, a PMOS transistor P1, a PMOS transistor P2 and a PMOS transistor P3, and the 2-tube read-out and calculation part comprises an NMOS transistor N5 and an NMOS transistor N6. The nine-tube SRAM unit is composed of a write-in and storage part and a read-out and calculation part, the write-in and storage part comprises a tube N1, a tube N2, a tube N3, a tube N4, a tube P1, a tube P2 and a tube P3, and the read-out and calculation part comprises a tube N5 and a tube N6. The write-in and storage part is responsible for writing data and storing the data. And the reading and calculating part is responsible for data reading and logic operation among the data. According to the inventio