Ferroelectric capacitance behavior model construction method, system, equipment and product

The invention belongs to the technical field of semiconductor integrated circuit design, and aims to provide a ferroelectric capacitance behavior model construction method, system, equipment and product. The method comprises the following steps: acquiring test data; creating an initial ferroelectric capacitance behavior model by adopting a Verilog-A language, defining port types and electrical characteristic parameters of two ports of the initial ferroelectric capacitance behavior model, and defining initial model parameters of the initial ferroelectric capacitance behavior model; defining a ferroelectric capacitor element in a path between two ports of the initial ferroelectric capacitor behavior model, and assigning a preset behavior description formula to the ferroelectric capacitor element to obtain an initial ferroelectric capacitor behavior model; and creating a simulation netlist file matched with the initial ferroelectric capacitance behavior model, creating a sub-circuit, calling the initial ferroele