Method for selectively depositing bismuth based ferroelectric films

A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain...

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Bibliographische Detailangaben
Hauptverfasser:	J.R. ROEDER, F. HINTERMAIER, B. HENDRIX
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.