Spin-orbit moment magnetic random access memory unit, read-write method thereof and magnetic random access memory
The invention discloses a spin-orbit moment magnetic random access memory unit, a read-write method thereof and a magnetic random access memory, and relates to the technical field of spintronics, the spin-orbit moment magnetic random access memory unit comprises a magnetic free layer, a spacing laye...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a spin-orbit moment magnetic random access memory unit, a read-write method thereof and a magnetic random access memory, and relates to the technical field of spintronics, the spin-orbit moment magnetic random access memory unit comprises a magnetic free layer, a spacing layer and a magnetic fixed layer which are stacked in sequence, the magnetic free layer has vertical magnetization with variable direction, and the magnetic fixed layer has vertical magnetization with fixed direction; a first electrode is arranged on the magnetic fixing layer; the abnormal spin orbit moment layer is in contact with the magnetic free layer, and the abnormal spin orbit moment layer has an in-plane magnetization direction and is used for generating an abnormal spin Hall effect; a second electrode and a third electrode are arranged on the two sides of the abnormal spin orbit moment layer respectively. According to the invention, the magnetic free layer is directionally overturned by using the abnormal spin |
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