Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof, the device comprises a hybrid semiconductor substrate, and the hybrid semiconductor substrate comprises an SOI substrate, a bulk silicon substrate and an SON substrate which are connected in sequence; wherein the SOI substrate comprises bottom layer silicon, an oxidation buried layer and top layer silicon which are sequentially arranged from bottom to top, the bulk silicon substrate comprises bottom layer silicon and bulk silicon which are sequentially arranged from bottom to top, and the SON substrate comprises bottom layer silicon, a cavity and top layer silicon which are sequentially arranged from bottom to top. The flexibility of the semiconductor device is improved by mixing the semiconductor substrates, and the selection of the semiconductor device is improved. 本发明提供一种半导体器件及其制作方法，所述器件包括混合半导体衬底，所述混合半导体衬底包括依次连接的SOI衬底、体硅衬底以及SON衬底；其中，所述SOI衬底包括由下至上依次排布的底层硅、氧化埋层以及顶层硅，所述体硅衬底包括由下至上依次排布的底层硅与体硅，所述SON衬底包括由下至上依次排布的底层硅、空腔以及顶层硅。本发明通过混合半