SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a first interlayer insulating layer disposed on a substrate; a first conductive line disposed in the first interlayer insulating layer and having a protrusion protruding above an upper side of the first interlayer insulating layer; an etch stop layer disposed on the first interlayer insulating layer and the first conductive line; and a via passing through the etch stop layer and contacting the first conductive line, wherein the etch stop layer includes a first etch stop layer having a curved shape in a cross-sectional view and a second etch stop layer disposed on the first etch stop layer and having a thickness variation. 提供一种半导体装置及其制造方法。半导体装置包括：设置在衬底上的第一层间绝缘层；第一导电线，其设置在第一层间绝缘层中，并具有突出到第一层间绝缘层的上侧上方的突起；蚀刻停止层，其设置在第一层间绝缘层和第一导电线上；以及穿过蚀刻停止层并与第一导电线接触的过孔件，其中蚀刻停止层包括在截面图中具有弯曲形状的第一蚀刻停止层和设置在第一蚀刻停止层上并具有厚度变化的第二蚀刻停止层。