FinFET electromagnetic reliability prediction method based on neural network

The invention discloses a FinFET (FinFET) electromagnetic reliability prediction method based on a neural network. The method comprises the following steps of: 1, modeling a FinFET device by using TCAD and constructing a circuit; step 2, acquiring multiple groups of HPM electromagnetic pulse paramet...

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Bibliographische Detailangaben
Hauptverfasser: ZHAO PENG, FENG WANGLONG, ZENG YUXIANG, SUN ZHIYI, GU SHIJIE, WANG SHULONG, CHEN YILEI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a FinFET (FinFET) electromagnetic reliability prediction method based on a neural network. The method comprises the following steps of: 1, modeling a FinFET device by using TCAD and constructing a circuit; step 2, acquiring multiple groups of HPM electromagnetic pulse parameters, resistance values of external resistors of the device and corresponding electromagnetic reliability indexes as a sample set; 3, randomly dividing the sample set into a training set, a verification set and a test set in proportion; respectively carrying out standardization processing on input parameters of the training set and the verification set, and then carrying out normalization processing on output parameters of the training set and the verification set; step 4, constructing a neural network model; 5, inputting the sample data set to train the neural network model, and obtaining a trained neural network calibration model; and step 6, obtaining an index for predicting the electromagnetic reliability of the