Preparation method of two-dimensional TMDCs material based on PECVD method

The invention relates to a preparation method of a two-dimensional TMDCs material based on a PECVD (Plasma Enhanced Chemical Vapor Deposition) method, which comprises the following steps: directly adding an M metal source inorganic salt with the mass fraction of 1-10mg/ml into deionized water, and uniformly stirring through a magnetic stirrer to obtain an M metal source solution; spin-coating the M metal source solution on the surface of the growth substrate after wettability treatment; the growth substrate spin-coated with the M metal source is placed in a plasma enhanced chemical vapor deposition tubular furnace, and confinement or non-confinement placement is adopted; 1-3 g of the high-purity solid transition metal powder is evenly laid in the center of a radio frequency coil, and a chalcogen X source in the two-dimensional transition metal chalcogen compound MX2 is provided. According to the method, the consumption of the chalcogenide metal is greatly reduced, the activity of the chalcogenide metal source