Hafnium-based ferroelectric device and preparation method and application thereof

The invention relates to the technical field of microelectronics, in particular to a hafnium-based ferroelectric device and a preparation method and application thereof. The hafnium-based ferroelectric device comprises a substrate, a bottom electrode, a functional layer and a top electrode which are sequentially arranged from bottom to top; wherein an interface layer is arranged between the bottom electrode and the functional layer and/or between the functional layer and the top electrode, and the interface layer is an NbOx film grown through a magnetron sputtering or atomic layer deposition technology. Nb in the NbOx has more valence states and is extremely easy to lose oxygen and obtain oxygen, so that O ions can be frequently provided for the ferroelectric layer in a cyclic erasing process to fill up generated defects, prolong wakeup time and fatigue time in durability and slow down the reduction of a polarization value, and the device shows more durable operability and a larger read-write window; besides,