Oxidation hole preparation method based on compensation type etching structure

The invention discloses an oxidation hole preparation method based on a compensation type etching structure, a device mesa structure obtained by the method is a compensation type etching mesa structure formed by a polygon instead of a non-circular structure, and the device grows an epitaxial structure on an N-type GaAs substrate. An epitaxial structure of the device sequentially comprises an N-type metal electrode, a GaAs substrate, an N-type DBR reflecting layer, an active layer, an oxidation limiting layer, a P-type DBR reflecting layer, a P-type metal electrode, a circular groove and a compensation type etching mesa structure from a substrate to the top. Under the action of wet oxidation, the vertical cavity surface emitting laser based on the compensation type etching structure can form triangular and rhombic oxidation holes. The vertical cavity surface emitting laser with the triangular and rhombic oxidation hole structure has a good inhibition effect on a high-order mold, and is beneficial to improving