Semiconductor device

The invention provides a semiconductor device which comprises a semiconductor layer and a trench gate structure, the semiconductor layer is provided with a first surface and a second surface which are opposite, and the semiconductor layer comprises a source region extending from the first surface to the second surface; at least part of the drift region is located between the body region and the second surface, and the first part of the body region is located between the source region and the drift region; wherein in the first surface, the whole groove gate structure extends in the first direction and is provided with a plurality of bending areas, and the source area is adjacent to the first side wall and/or the second side wall of at least one bending area of the groove gate structure, so that the source area is provided with a bending side wall matched with the corresponding bending area. According to the semiconductor device, the extension shape of the trench gate structure is reasonably set to enable the t