Semiconductor structure and preparation method thereof
The invention provides a semiconductor structure and a preparation method thereof, relates to the technical field of semiconductors, and is used for solving the technical problem that the performance of the semiconductor structure cannot be ensured along with the reduction of the size of the semicon...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a semiconductor structure and a preparation method thereof, relates to the technical field of semiconductors, and is used for solving the technical problem that the performance of the semiconductor structure cannot be ensured along with the reduction of the size of the semiconductor structure, and the semiconductor structure comprises a substrate, a source electrode layer, a drain electrode layer, a channel layer, a grid electrode structure, a grid electrode dielectric layer and a dielectric layer, the source electrode layer and the drain electrode layer are stacked on the substrate; the channel layer is located between the source electrode layer and the drain electrode layer; the gate structure is located on the side wall of the channel layer; the gate dielectric layer is located between the gate structure and the channel layer; a part of the dielectric layer is arranged between the source electrode layer and the grid electrode structure; wherein the source layer is provided with a plu |
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