Corrosion device for heavily doped n-type silicon carbide wafer and dislocation detection method

The invention relates to the technical field of semiconductors, in particular to a corrosion device for a heavily doped n-type silicon carbide wafer and a dislocation detection method. According to the invention, the heavily-doped n-type silicon carbide wafer is placed in the corrosive agent, and th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG RONG, YANG DEREN, KONG YAFEI, XU LINGMAO, PI XIAODONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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