Corrosion device for heavily doped n-type silicon carbide wafer and dislocation detection method

The invention relates to the technical field of semiconductors, in particular to a corrosion device for a heavily doped n-type silicon carbide wafer and a dislocation detection method. According to the invention, the heavily-doped n-type silicon carbide wafer is placed in the corrosive agent, and the power supply is utilized to apply voltage to the heavily-doped n-type silicon carbide wafer and the electrode, so that the electrode, the corrosive agent and the heavily-doped n-type silicon carbide wafer form a channel; according to the method, the surface of the heavily-doped n-type silicon carbide wafer is subjected to electrochemical corrosion, so that electrochemical corrosion is generated on the surface of the heavily-doped n-type silicon carbide wafer, and the electrochemical corrosion and the chemical corrosion of the corrosive agent are combined to act on the surface of the heavily-doped n-type silicon carbide wafer. And different dislocation types of TSD, TED and BPD can be clearly distinguished accordi