Preparation method of hydrogen sensor based on nickel oxide quantum dot material
The invention relates to the technical field of gas sensing, in particular to a preparation method of a hydrogen sensor based on a nickel oxide quantum dot material, which comprises the following steps: providing a substrate; forming an insulating layer on the substrate; performing patterning proces...
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| creator | WANG ZHANGTONG YANG CHUNLEI DAI ZIYANG CHEN SHUTING CHANG TIANCI HU JIXIANG SHAO YAN |
| description | The invention relates to the technical field of gas sensing, in particular to a preparation method of a hydrogen sensor based on a nickel oxide quantum dot material, which comprises the following steps: providing a substrate; forming an insulating layer on the substrate; performing patterning processing on the insulating layer to obtain a pre-suspended film structure; forming a seed crystal layer on the insulating layer; photoetching and overlaying an electrode pattern on the seed crystal layer; an electrode layer with a Wheatstone bridge pattern is formed on the surface of the seed crystal layer, and annealing treatment is carried out after glue washing; removing the redundant seed crystal layer and part of the substrate to form an MEMS micro heating plate with a suspended film structure and a Wheatstone bridge structure electrode; dropwise coating hydrogen-sensitive material slurry on the hydrogen-sensitive area of the electrode layer to form a hydrogen-sensitive layer; wherein the hydrogen-sensitive materi |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118387829A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118387829A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118387829A3</originalsourceid><addsrcrecordid>eNqNyjEOwjAQBVE3FAi4w3IAipACU6IIRIVS0EdL_EMskl1jOxLcHgoOQDXFm7mp64jAkbNXoRG5V0faUf92Ue8QSpCkkW6c8AUh8e0DA-nLO9BzYsnTSE4zjZwRPQ9LM-t4SFj9ujDr0_FanTcI2iAFbiHITXUpClvand3uD-U_zwez7jeW</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Preparation method of hydrogen sensor based on nickel oxide quantum dot material</title><source>esp@cenet</source><creator>WANG ZHANGTONG ; YANG CHUNLEI ; DAI ZIYANG ; CHEN SHUTING ; CHANG TIANCI ; HU JIXIANG ; SHAO YAN</creator><creatorcontrib>WANG ZHANGTONG ; YANG CHUNLEI ; DAI ZIYANG ; CHEN SHUTING ; CHANG TIANCI ; HU JIXIANG ; SHAO YAN</creatorcontrib><description>The invention relates to the technical field of gas sensing, in particular to a preparation method of a hydrogen sensor based on a nickel oxide quantum dot material, which comprises the following steps: providing a substrate; forming an insulating layer on the substrate; performing patterning processing on the insulating layer to obtain a pre-suspended film structure; forming a seed crystal layer on the insulating layer; photoetching and overlaying an electrode pattern on the seed crystal layer; an electrode layer with a Wheatstone bridge pattern is formed on the surface of the seed crystal layer, and annealing treatment is carried out after glue washing; removing the redundant seed crystal layer and part of the substrate to form an MEMS micro heating plate with a suspended film structure and a Wheatstone bridge structure electrode; dropwise coating hydrogen-sensitive material slurry on the hydrogen-sensitive area of the electrode layer to form a hydrogen-sensitive layer; wherein the hydrogen-sensitive materi</description><language>chi ; eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; MEASURING ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TESTING ; TRANSPORTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240726&DB=EPODOC&CC=CN&NR=118387829A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240726&DB=EPODOC&CC=CN&NR=118387829A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG ZHANGTONG</creatorcontrib><creatorcontrib>YANG CHUNLEI</creatorcontrib><creatorcontrib>DAI ZIYANG</creatorcontrib><creatorcontrib>CHEN SHUTING</creatorcontrib><creatorcontrib>CHANG TIANCI</creatorcontrib><creatorcontrib>HU JIXIANG</creatorcontrib><creatorcontrib>SHAO YAN</creatorcontrib><title>Preparation method of hydrogen sensor based on nickel oxide quantum dot material</title><description>The invention relates to the technical field of gas sensing, in particular to a preparation method of a hydrogen sensor based on a nickel oxide quantum dot material, which comprises the following steps: providing a substrate; forming an insulating layer on the substrate; performing patterning processing on the insulating layer to obtain a pre-suspended film structure; forming a seed crystal layer on the insulating layer; photoetching and overlaying an electrode pattern on the seed crystal layer; an electrode layer with a Wheatstone bridge pattern is formed on the surface of the seed crystal layer, and annealing treatment is carried out after glue washing; removing the redundant seed crystal layer and part of the substrate to form an MEMS micro heating plate with a suspended film structure and a Wheatstone bridge structure electrode; dropwise coating hydrogen-sensitive material slurry on the hydrogen-sensitive area of the electrode layer to form a hydrogen-sensitive layer; wherein the hydrogen-sensitive materi</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>MEASURING</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TESTING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAQBVE3FAi4w3IAipACU6IIRIVS0EdL_EMskl1jOxLcHgoOQDXFm7mp64jAkbNXoRG5V0faUf92Ue8QSpCkkW6c8AUh8e0DA-nLO9BzYsnTSE4zjZwRPQ9LM-t4SFj9ujDr0_FanTcI2iAFbiHITXUpClvand3uD-U_zwez7jeW</recordid><startdate>20240726</startdate><enddate>20240726</enddate><creator>WANG ZHANGTONG</creator><creator>YANG CHUNLEI</creator><creator>DAI ZIYANG</creator><creator>CHEN SHUTING</creator><creator>CHANG TIANCI</creator><creator>HU JIXIANG</creator><creator>SHAO YAN</creator><scope>EVB</scope></search><sort><creationdate>20240726</creationdate><title>Preparation method of hydrogen sensor based on nickel oxide quantum dot material</title><author>WANG ZHANGTONG ; YANG CHUNLEI ; DAI ZIYANG ; CHEN SHUTING ; CHANG TIANCI ; HU JIXIANG ; SHAO YAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118387829A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>MEASURING</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG ZHANGTONG</creatorcontrib><creatorcontrib>YANG CHUNLEI</creatorcontrib><creatorcontrib>DAI ZIYANG</creatorcontrib><creatorcontrib>CHEN SHUTING</creatorcontrib><creatorcontrib>CHANG TIANCI</creatorcontrib><creatorcontrib>HU JIXIANG</creatorcontrib><creatorcontrib>SHAO YAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG ZHANGTONG</au><au>YANG CHUNLEI</au><au>DAI ZIYANG</au><au>CHEN SHUTING</au><au>CHANG TIANCI</au><au>HU JIXIANG</au><au>SHAO YAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of hydrogen sensor based on nickel oxide quantum dot material</title><date>2024-07-26</date><risdate>2024</risdate><abstract>The invention relates to the technical field of gas sensing, in particular to a preparation method of a hydrogen sensor based on a nickel oxide quantum dot material, which comprises the following steps: providing a substrate; forming an insulating layer on the substrate; performing patterning processing on the insulating layer to obtain a pre-suspended film structure; forming a seed crystal layer on the insulating layer; photoetching and overlaying an electrode pattern on the seed crystal layer; an electrode layer with a Wheatstone bridge pattern is formed on the surface of the seed crystal layer, and annealing treatment is carried out after glue washing; removing the redundant seed crystal layer and part of the substrate to form an MEMS micro heating plate with a suspended film structure and a Wheatstone bridge structure electrode; dropwise coating hydrogen-sensitive material slurry on the hydrogen-sensitive area of the electrode layer to form a hydrogen-sensitive layer; wherein the hydrogen-sensitive materi</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MEASURING MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TESTING TRANSPORTING |
| title | Preparation method of hydrogen sensor based on nickel oxide quantum dot material |
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