Preparation method of hydrogen sensor based on nickel oxide quantum dot material

The invention relates to the technical field of gas sensing, in particular to a preparation method of a hydrogen sensor based on a nickel oxide quantum dot material, which comprises the following steps: providing a substrate; forming an insulating layer on the substrate; performing patterning processing on the insulating layer to obtain a pre-suspended film structure; forming a seed crystal layer on the insulating layer; photoetching and overlaying an electrode pattern on the seed crystal layer; an electrode layer with a Wheatstone bridge pattern is formed on the surface of the seed crystal layer, and annealing treatment is carried out after glue washing; removing the redundant seed crystal layer and part of the substrate to form an MEMS micro heating plate with a suspended film structure and a Wheatstone bridge structure electrode; dropwise coating hydrogen-sensitive material slurry on the hydrogen-sensitive area of the electrode layer to form a hydrogen-sensitive layer; wherein the hydrogen-sensitive materi