Pixel structure for improving photoelectric conversion efficiency of light sensing material

A pixel structure comprises an upper electrode, a plurality of lower electrodes, a light sensing material layer and a metal wiring layer. The light sensing material layer is disposed between the upper electrode and the plurality of lower electrodes. The lower electrodes of opposite different pixels are separated from each other and have gaps. The metal wiring layer is provided with a reflection metal layer opposite to the gap, and the reflection metal layer reflects stray light penetrating through the light sensing material layer through the surface plasma resonance effect. 一种包含上电极、多个下电极、光感测材料层以及金属配线层的像素结构。所述光感测材料层配置于所述上电极与所述多个下电极之间。相对不同像素的下电极彼此分离并具有间隙。所述金属配线层具有相对所述间隙的反射金属层，该反射金属层通过表面电浆子共振效应反射穿过所述光感测材料层的杂散光。