SEMICONDUCTOR DEVICE WITH IMPROVED SURFACE CHARGE CONTROL IN TERMINATION REGIONS

The present disclosure relates to a semiconductor device including a semiconductor body including a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate. An active region and a termination region adjacent to the active region are arranged in the epitaxial layer. The termination region includes a junction termination extension (JTE) boundary of the first conductivity type. The JTE boundary includes a first layer of a first conductivity type and a second layer of a second conductivity type different from the first conductivity type. The second layer is on top of the first layer. The semiconductor substrate and the epitaxial layer have a second conductivity type. 本公开涉及一种半导体装置，该半导体装置包括半导体主体，该半导体主体包括半导体衬底和形成在半导体衬底上的外延层。有源区和与有源区相邻的端接区布置在外延层中。端接区包括第一导电类型的结端接扩展JTE边界。JTE边界包括第一导电类型的第一层和不同于第一导电类型的第二导电类型的第二层。第二层位于第一层的顶部上。半导体衬底和外延层具有第二导电类型。