Pattern trimming method and plasma processing device

The invention provides a graph pruning method, in the graph pruning process, the adopted bias power is 0-50W, and compared with the bias power adopted in the conventional pruning process, the bias power is small and is low. Therefore, even if the photoresist is removed, the pattern can be directly trimmed by adopting the process condition, so that the influence of the photoresist on the pattern is avoided, and the contour quality of the pattern is improved. Besides, due to the fact that the bias power is small, etching gas hardly reacts with the bottom material layer which is not covered by the pattern in the pattern trimming process, and therefore no groove is formed in the bottom material layer. In addition, the invention further provides a plasma processing device. 本申请提供了一种图形的修剪方法，在修剪图形中，采用的偏置功率为0～50W，相较于常规修剪过程中采用的偏置功率，该偏置功率较小，为低偏置功率。因此，即使光刻胶已经被除去，也可以采用该工艺条件直接对图形进行修剪，如此，避免了光刻胶对图形的影响，进而有利于提高图形的轮廓质量。另外，因该偏置功率较小，因此，在对图形修剪过程中，刻蚀气体几乎不会与未被图形覆盖的底部材料层进行反应，所以，不会在底部材料层上形成凹槽。此外，本申请还提供了一种等离子体处理装置。