Growth device of silicon carbide crystal as well as preparation method and application of growth device

The invention relates to a silicon carbide crystal growth device and a preparation method and application thereof.The silicon carbide crystal growth device comprises a graphite crucible bottom, a seed crystal base and a crucible top cover, and the seed crystal base is located in a cavity formed by the graphite crucible bottom and the crucible top cover; the seed crystal base comprises a seed crystal support as well as a first pyrolytic graphite layer and a silicon carbide layer which are sequentially stacked on the surface of the seed crystal support, and a second pyrolytic graphite layer is stacked on the inner surface of the crucible top cover; wherein the thickness of the first pyrolytic graphite layer is a, the thickness of the silicon carbide layer is b, the thickness of the first pyrolytic graphite layer is larger than or equal to the roughness of the seed crystal support, and the ratio of a to b is 0.5-1. The growth device of the silicon carbide crystal not only can prevent air holes from being formed