Oxygen and iodine containing hydrofluorocarbon compounds for etching semiconductor structures

A method includes introducing a vapor of an oxygen and iodine containing etch compound into a chamber containing a substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing layer, where the oxygen and iodine containing etch compound has the formula CnHxFyIzOe, where 0 < = n < = 10, 0 < = x < = 21, 0 < = y < = 21, 1 < = z < = 4, and 1 < = e < = 2; activating the plasma to produce an activated oxygen and iodine containing etch compound; and allowing an etch reaction between the activated oxygen and iodine containing etch compound and the silicon containing film to selectively etch the silicon containing film from the patterned mask layer, thereby forming a patterned structure. 一种方法，该方法包括：将含氧和碘的蚀刻化合物的蒸气引入容纳有衬底的腔室中，该衬底具有沉积在其上的含硅膜和沉积在该含硅层上的图案化掩模层，其中该含氧和碘的蚀刻化合物具有式CnHxFyIzOe，其中0≤n≤10，0≤x≤21，0≤y≤21，1≤z≤4，并且1≤e≤2；使等离子体活化以产生经活化的含氧和碘的蚀刻化合物；以及允许在该经活化的含氧和碘的蚀刻化合物与该含硅膜之间进行蚀刻反应，以从该图案化掩模层选择性地蚀刻该含硅膜，从而形成图案化结构。