Integrated circuit and manufacturing method thereof

The invention discloses an integrated circuit and a manufacturing method thereof. The integrated circuit comprises a substrate, an interconnection layer, an insulating layer, a metal bump structure and a metal-insulating layer-metal capacitor. The interconnection layer is arranged on the substrate, the interconnection layer comprises an interlayer dielectric layer and an interconnection structure, and the interconnection structure is arranged in the interlayer dielectric layer. An insulating layer is disposed on the interconnect layer, a metal bump structure is disposed on the insulating layer, and a metal-insulating layer-metal capacitor is conformally disposed on the metal bump structure and the insulating layer. The manufacturing method of the integrated circuit comprises the following steps. In one embodiment, an interconnect layer is formed over a substrate, an insulating layer is formed over the interconnect layer, a metal bump structure is formed over the insulating layer, and a metal-insulating layer-