Gate resistor, SiC power module and dynamic current sharing control method

The invention discloses a gate resistor, a SiC power module and a dynamic current sharing control method, and relates to the technical field of power electronic devices. The insulating layer is arranged above the metal layer; the first loop metal layer is arranged above the insulating layer; the second loop metal layer is arranged above the insulating layer and is not in contact with the first loop metal layer; the third loop metal layer is arranged above the insulating layer and is not in contact with the first loop metal layer and the second loop metal layer; and the resistor is arranged between the second loop metal layer and the third loop metal layer and is in contact with the second loop metal layer and the third loop metal layer. According to the scheme, the performance and reliability of the SiC power module can be improved. 本发明公开了一种门极电阻、SiC功率模块及动态均流控制方法，涉及功率电子器件技术领域，包括：金属层；绝缘层，设置在所述金属层的上方；第一回路金属层，设置在所述绝缘层的上方；第二回路金属层，设置在所述绝缘层的上方，且与所述第一回路金属层不接触；第三回路金属层，设置在所述绝缘层的上方，且与所述第一回路金属层和第二回路金属层均不接触；电阻，设置在所述第二回路金属