Dynamic junction temperature measuring device based on SiC MOSFET threshold voltage

The invention relates to a dynamic junction temperature measuring device based on a SiC MOSFET threshold voltage, and the device comprises a current detection part which is connected with a source electrode of a measured SiC MOSFET in series, and is used for generating a positive pulse signal when the SiC MOSFET is turned on, and generating a negative pulse signal when the SiC MOSFET is turned off; the threshold voltage acquisition control part is used for generating a threshold voltage acquisition control signal according to the positive pulse signal and the negative pulse signal; the threshold voltage sampling part is used for collecting the threshold voltage between the gate source of the SiC MOSFET to be detected according to the threshold voltage collection control signal; and the junction temperature value determining part is used for determining the junction temperature value under the collected threshold voltage according to the curve of the junction temperature and the threshold voltage. According to