Semiconductor nanoparticles, method for producing same, electroluminescent device, and electronic apparatus
A semiconductor nanoparticle, a method of manufacturing the same, an electroluminescent device, and an electronic apparatus, in which the semiconductor nanoparticle includes: a zinc chalcogenide including zinc, selenium, and sulfur, the semiconductor nanoparticle not including cadmium, the semicondu...
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Zusammenfassung: | A semiconductor nanoparticle, a method of manufacturing the same, an electroluminescent device, and an electronic apparatus, in which the semiconductor nanoparticle includes: a zinc chalcogenide including zinc, selenium, and sulfur, the semiconductor nanoparticle not including cadmium, the semiconductor nanoparticles exhibit a peak emission wavelength in a range of greater than or equal to about 455 nanometers (nm) and less than or equal to about 480 nm in photoluminescence spectrometry analysis, exhibit an absolute quantum yield of greater than or equal to about 80% and a half width of less than or equal to about 50 nm, and an average particle size of the semiconductor nanoparticles is greater than or equal to about 12 nm and less than or equal to about 50 nm.
半导体纳米颗粒、其制造方法、电致发光器件和电子设备,其中所述半导体纳米颗粒包括:包括锌、硒、和硫的锌硫属化物,所述半导体纳米颗粒不包括镉,所述半导体纳米颗粒呈现出在大于或等于约455纳米(nm)且小于或等于约480nm的范围内的峰值发射波长,在光致发光光谱法分析中,所述半导体纳米颗粒呈现出大于或等于约80%的绝对量子产率和小于或等于约50nm的半宽度,并且所述半导体纳米颗粒的平均颗粒尺寸大于或等于约12nm且小于或等于约50nm。 |
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