Method for producing p-type single crystal silicon

The invention relates to a method for manufacturing p-type single crystal silicon. A method for producing a p-type single crystal silicon by melting a polycrystalline silicon raw material comprising a plurality of polycrystalline silicon chunks, said method comprising a step for producing a p-type s...

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Bibliographische Detailangaben
Hauptverfasser: EMOTO MIKI, ONODA TORU, ASANO TAKUYA, SAEKI KOICHI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a method for manufacturing p-type single crystal silicon. A method for producing a p-type single crystal silicon by melting a polycrystalline silicon raw material comprising a plurality of polycrystalline silicon chunks, said method comprising a step for producing a p-type single crystal silicon having a resistivity of 10000 [Omega] cm or more without adding a dopant during melting of the polycrystalline silicon raw material, and a step for producing a p-type single crystal silicon having a resistivity of 10000 [Omega] cm or more as the polycrystalline silicon raw material, a polycrystalline silicon raw material is used in which the total concentration of donor elements present in the main body of the polycrystalline silicon raw material is Cd1 [ppta], the total concentration of acceptor elements present in the main body of the polycrystalline silicon raw material is Ca1 [ppta], and the total concentration of donor elements present on the surface of the polycrystalline silicon raw mat